VBsemi Elec FDG6316P-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | FDG6316P-VB |
| LCSC Part # | C878880 |
| Packaging | SC-70-6 |
| Customer # | |
| Key Attributes | MOSFET P-CH ARR 20V 1.8A SC-70-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SC-70-6 | |
| Output Capacitance(Coss) | 45pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.8A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| RDS(on) | 155mΩ@4.5V;235mΩ@2.5V | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 210pF | |
| Gate Charge(Qg) | 2.7nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- RoHS compliant per directive 2002/95/EC
- RoHS compliant
- P-channel MOSFET
In-Stock: 60
60 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2334$ 0.2218 | $ 1.11 |
| 50+ | $ 0.1862$ 0.1769 | $ 8.85 |
| 150+ | $ 0.166$ 0.1577 | $ 23.66 |
| 500+ | $ 0.1407$ 0.1337 | $ 66.85 |
| 3,000+ | $ 0.1159$ 0.1102 | $ 330.60 |
| 6,000+ | $ 0.1092$ 0.1038 | $ 622.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SC-70-6 | |
| Output Capacitance(Coss) | 45pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.8A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| RDS(on) | 155mΩ@4.5V;235mΩ@2.5V | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 210pF | |
| Gate Charge(Qg) | 2.7nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- RoHS compliant per directive 2002/95/EC
- RoHS compliant
- P-channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



