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UTC MMBT5551G-B-AE3-R product image
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UTC MMBT5551G-B-AE3-RRoHS

Manufacturer
UTCAsian Brands
MPN
MMBT5551G-B-AE3-R
LCSC Part #
C87881
Packaging
SOT-23
Customer #
Key Attributes
TRANS NPN 160V 600mA SOT-23
Datasheetpdf iconUTC MMBT5551G-B-AE3-R
In-Stock: 2,040
2,040 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0226$ 0.45
200+$ 0.0178$ 3.56
600+$ 0.0151$ 9.06
3,000+$ 0.0135$ 40.50
9,000+$ 0.0121$ 108.90
21,000+$ 0.0114$ 239.40
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerUTC
PackagingSOT-23
Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain150
Current - Collector(Ic)600mA
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Operating Temperature-
Vce Saturation(VCE(sat))200mV
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Introduction

AI Translation

The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.

Features

AI Translation
  • High Collector-Emitter Voltage: VCEO=160V
  • High current gain