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onsemi FDS6680ARoHS

Manufacturer
onsemi
MPN
FDS6680A
LCSC Part #
C87668
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 30V 12.5A SO-8
Datasheetpdf icononsemi FDS6680A
In-Stock: 185
185 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.0466$ 1.05
10+$ 0.8887$ 8.89
30+$ 0.8089$ 24.27
100+$ 0.7308$ 73.08
500+$ 0.6836$ 341.80
1,000+$ 0.6592$ 659.20
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)12.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.62nF
Gate Charge(Qg)23nC@15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

AI Translation
  • 12.5 A, 30 V
  • RDS(ON) = 9.5 mΩ @ VGS = 10 V
  • RDS(ON) = 13 mΩ @ VGS = 4.5 V
  • High power and current handling capability