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onsemi FDS6690ARoHS

Manufacturer
onsemi
MPN
FDS6690A
LCSC Part #
C87667
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 30V 11A SO-8
Datasheetpdf icononsemi FDS6690A
In-Stock: 1,797
1,797 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5672$ 0.57
10+$ 0.4548$ 4.55
30+$ 0.3977$ 11.93
100+$ 0.3423$ 34.23
500+$ 0.3097$ 154.85
1,000+$ 0.2918$ 291.80
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)17mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.205nF
Gate Charge(Qg)16nC@15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

AI Translation
  • 11 A, 30 V
  • RDS(ON) = 12.5 mΩ @ ΔVGS = 10 V
  • RDS(ON) = 17.0 mΩ @ ΔVGS = 4.5 V
  • High power and current handling capability