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onsemi MBRS3200T3GRoHS

Manufacturer
MPN
MBRS3200T3G
LCSC Part #
C86674
Packaging
SMB(DO-214AA)
Customer #
Key Attributes
DIODE SCHOTTKY 200V SMB(DO-214AA)
Datasheetpdf icononsemi MBRS3200T3G
In-Stock: 3,860
3,860 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2977$ 1.49
50+$ 0.2404$ 12.02
150+$ 0.1779$ 26.69
500+$ 0.1473$ 73.65
2,500+$ 0.1336$ 334.00
5,000+$ 0.1254$ 627.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
Manufactureronsemi
PackagingSMB(DO-214AA)
Diode Configuration1 Independent
Operating Junction Temperature Range-65℃~+175℃
Voltage - DC Reverse (Vr) (Max)200V
Voltage - Forward(Vf@If)840mV@3A
Reverse Leakage Current (Ir)1mA@200V
Non-Repetitive Peak Forward Surge Current100A
Current - Rectified3A

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

Features

AI Translation
  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Very High Blocking Voltage - 200 V
  • 175℃ Operating Junction Temperature
  • Guard-Ring for Stress Protection
  • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AEC-Q101 Qualified and PPAP Capable
  • These are Pb-Free Devices