ST STN4NF03L
| Manufacturer | |
| MPN | STN4NF03L |
| LCSC Part # | C85568 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 6.5A SOT-223 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 3.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 9nC@10V | |
| Vgs | ±16V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Power MOSFET is the latest development of unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
AI Translation
- Low threshold drive
Applications
AI Translation
- Switching applications
In-Stock: 2,340
2,340 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3901 | $ 1.95 |
| 50+ | $ 0.3236 | $ 16.18 |
| 150+ | $ 0.2951 | $ 44.27 |
| 500+ | $ 0.2498 | $ 124.90 |
| 2,500+ | $ 0.2339 | $ 584.75 |
| 4,000+ | $ 0.2244 | $ 897.60 |
Standard Packaging4000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 3.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 9nC@10V | |
| Vgs | ±16V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Power MOSFET is the latest development of unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
AI Translation
- Low threshold drive
Applications
AI Translation
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



