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HUASHUO FDN335N product image
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HUASHUO FDN335NRoHS

Manufacturer
HUASHUOAsian Brands
MPN
FDN335N
LCSC Part #
C845588
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 20V 3A SOT-23
Datasheetpdf iconHUASHUO FDN335N
In-Stock: 3,140
3,140 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0389$ 0.78
200+$ 0.0312$ 6.24
600+$ 0.0273$ 16.38
3,000+$ 0.0219$ 65.70
9,000+$ 0.0195$ 175.50
21,000+$ 0.0184$ 386.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)39pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation710mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)60mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)180pF
Gate Charge(Qg)3.5nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The FDN335N is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FDN335N meets the RoHS and Green Product requirement with full function reliability approved.

Features

AI Translation
  • Green Device Available
  • Super Low Gate Charge
  • Excellent Cdv/dt effect decline
  • Advanced high cell density Trench technology