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VISHAY SI4946BEY-T1-GE3
| Manufacturer | |
| MPN | SI4946BEY-T1-GE3 |
| LCSC Part # | C83862 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V 6.5A SO-8 |
| Datasheet |  VISHAY SI4946BEY-T1-GE3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 6.5A | |
| Pd - Power Dissipation | 3.7W | |
| RDS(on) | 41mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 840pF | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 71pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 6.5A | |
| Pd - Power Dissipation | 3.7W | |
| RDS(on) | 41mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 840pF | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 71pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET Power MOSFET
- 175 °C Maximum Junction Temperature
- 100 % Rg Tested
- Compliant to RoHS directive 2002/95/EC
- RoHS COMPLIANT HALOGEN FREE Available
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Minimum: 1Multiple: 1Sales Unit: Piece
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 6.5A | |
| Pd - Power Dissipation | 3.7W | |
| RDS(on) | 41mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 840pF | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 71pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 6.5A | |
| Pd - Power Dissipation | 3.7W | |
| RDS(on) | 41mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 840pF | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 71pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET Power MOSFET
- 175 °C Maximum Junction Temperature
- 100 % Rg Tested
- Compliant to RoHS directive 2002/95/EC
- RoHS COMPLIANT HALOGEN FREE Available
C83862 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |