Infineon IRFR4510TRPBF
| Manufacturer | |
| MPN | IRFR4510TRPBF |
| LCSC Part # | C83843 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 56A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 56A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 143W | |
| RDS(on) | 13.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.031nF | |
| Gate Charge(Qg) | 81nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Lead-free
Applications
AI Translation
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
In-Stock: 1,092
1,092 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.7707 | $ 1.77 |
| 10+ | $ 1.4903 | $ 14.90 |
| 30+ | $ 1.337 | $ 40.11 |
| 100+ | $ 1.1626 | $ 116.26 |
| 500+ | $ 0.8936 | $ 446.80 |
| 1,000+ | $ 0.8577 | $ 857.70 |
Standard Packaging2000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 56A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 143W | |
| RDS(on) | 13.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.031nF | |
| Gate Charge(Qg) | 81nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Lead-free
Applications
AI Translation
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



