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onsemi NDS0610
| Manufacturer | |
| MPN | NDS0610 |
| LCSC Part # | C83570 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 0.12A SOT-23 |
| Datasheet |  onsemi NDS0610 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 120mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 10Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 79pF | |
| Gate Charge(Qg) | 2.5nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These P-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
Features
- Voltage controlled p -channel small signal switch
- High density cell design for low Rps(ON)
- High saturation current
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0862 | $ 0.43 |
| 50+ | $ 0.0692 | $ 3.46 |
| 150+ | $ 0.0608 | $ 9.12 |
| 500+ | $ 0.0544 | $ 27.20 |
| 3,000+ | $ 0.0432 | $ 129.60 |
| 6,000+ | $ 0.0406 | $ 243.60 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 120mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 10Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 79pF | |
| Gate Charge(Qg) | 2.5nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These P-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
Features
- Voltage controlled p -channel small signal switch
- High density cell design for low Rps(ON)
- High saturation current
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |