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Infineon IRFR1205TRPBF product image
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Infineon IRFR1205TRPBFRoHS

Manufacturer
Infineon
MPN
IRFR1205TRPBF
LCSC Part #
C81467
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 55V 44A TO-252
Datasheetpdf iconInfineon IRFR1205TRPBF
In-Stock: 1,846
1,846 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7318$ 0.73
10+$ 0.6042$ 6.04
30+$ 0.5412$ 16.24
100+$ 0.4782$ 47.82
500+$ 0.3716$ 185.80
1,000+$ 0.3522$ 352.20
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252
Drain to Source Voltage55V
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)27mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)65nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

The 5th Generation HEXFET utilizes advanced process technology to achieve the lowest possible on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET power MOSFETs, provides designers with an extremely efficient device suitable for a wide range of applications. The D-PAK package is designed for SMT using vapor phase, infrared, or wave soldering techniques. The straight-lead version (IRFU series) is intended for through-hole mounting applications. In typical surface mount applications, power dissipation levels of up to 1.5 watts can be achieved.

Features

AI Translation
  • Ultra-low on-resistance
  • Surface mount (IRFR1205)
  • Straight lead (IRFU1205)
  • Fast switching
  • Fully avalanche rated
  • Lead-free