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ST STP110N8F6RoHS

Manufacturer
ST
MPN
STP110N8F6
LCSC Part #
C81146
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 80V 110A TO-220
Datasheetpdf iconST STP110N8F6
In-Stock: 23,280
23,280 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.1876$ 1.19
10+$ 0.9586$ 9.59
50+$ 0.7799$ 39.00
100+$ 0.6678$ 66.78
500+$ 0.5995$ 299.75
1,000+$ 0.5638$ 563.80
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage80V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.13nF
Gate Charge(Qg)150nC@10V
TypeN-Channel
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Introduction

AI Translation

This device is an N-channel power MOSFET developed using STripFET F6 technology featuring a novel trench gate structure. The resulting power MOSFET exhibits extremely low on-state resistance RDS(on) across all packages.

Features

AI Translation
  • Ultra-low on-resistance
  • Ultra-low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

AI Translation
  • Switching applications