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Infineon IKW15N120T2RoHS

Manufacturer
Infineon
MPN
IKW15N120T2
LCSC Part #
C79568
Packaging
TO-247-3
Customer #
Key Attributes
TrenchStop 2nd generation Series IGBT with anti-parallel Emitter Controlled Diode
Datasheetpdf iconInfineon IKW15N120T2
In-Stock: 60
60 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.2742$ 4.27
10+$ 3.7081$ 37.08
30+$ 3.3724$ 101.17
90+$ 3.0333$ 273.00
480+$ 2.876$ 1380.48
960+$ 2.8046$ 2692.42
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingTO-247-3
Pd - Power Dissipation235W
Td(off)362ns
Td(on)32ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)56pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@0.6mA
Vce Saturation(VCE(sat))2.2V@15A,15V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)300ns
Switching Energy(Eoff)800uJ
Turn-On Energy (Eon)1.25mJ
Input Capacitance(Cies)1nF
Output Capacitance(Coes)100pF
Gate Charge(Qg)93nC@15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Features

AI Translation
  • Short circuit withstand time – 10μs
  • very tight parameter distribution
  • high ruggedness, temperature stable behavior
  • Easy paralleling capability due to positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low Gate Charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
  • Qualified according to JEDEC1 for target applications
  • Pb-free lead plating; RoHS compliant

Applications

AI Translation
  • Frequency Converters
  • Uninterrupted Power Supply