ST STP55NF06L
| Manufacturer | |
| MPN | STP55NF06L |
| LCSC Part # | C77582 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 55A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 95W | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 37nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
AI Translation
- Exceptional dv/dt capability
- 100% avalanche tested
- Application oriented characterization
Applications
AI Translation
- Switching application
In-Stock: 347
347 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1466 | $ 1.15 |
| 10+ | $ 0.9692 | $ 9.69 |
| 50+ | $ 0.8805 | $ 44.03 |
| 100+ | $ 0.7918 | $ 79.18 |
| 500+ | $ 0.7386 | $ 369.30 |
| 1,200+ | $ 0.7128 | $ 855.36 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 95W | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 37nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
AI Translation
- Exceptional dv/dt capability
- 100% avalanche tested
- Application oriented characterization
Applications
AI Translation
- Switching application
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



