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UMW FDD86113LZ(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
FDD86113LZ(UMW)
LCSC Part #
C7588048
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 5.5A TO-252
Datasheetpdf iconUMW FDD86113LZ(UMW)
In-Stock: 1,085
1,085 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2111$ 1.06
50+$ 0.1654$ 8.27
150+$ 0.1459$ 21.89
500+$ 0.1215$ 60.75
2,500+$ 0.1107$ 276.75
5,000+$ 0.1041$ 520.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingTO-252
Drain to Source Voltage100V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation29W
RDS(on)80mΩ@10V;110mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)2.4pF
Number1 N-channel
Input Capacitance(Ciss)213pF
Gate Charge(Qg)3.7nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel logic-level MOSFET is manufactured using an advanced process that integrates shielded gate technology. The process is optimized for on-resistance while maintaining excellent switching performance.

Features

AI Translation
  • Typical HBM ESD protection level >6kV
  • High-performance trench technology for ultra-low RDS(ON)
  • VDS(V) = 100V
  • ID = 5.5A
  • RDS(ON) < 104mΩ (VGS = 10V)
  • RDS(ON) < 156mΩ (VGS = 4.5V)
  • Shielded gate MOSFET technology
  • High power and current handling capability in widely adopted SMT packages