Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KUU | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.6pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 182pF | |
| Gate Charge(Qg) | 3.75nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The 5N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Features
AI Translation
- VDS = 100V, ID = 5A
- RDS(ON, typ) = 90mΩ @ VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
In-Stock: 10
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0409 | $ 0.41 |
| 100+ | $ 0.0327 | $ 3.27 |
| 300+ | $ 0.0286 | $ 8.58 |
| 3,000+ | $ 0.0255 | $ 76.50 |
| 6,000+ | $ 0.0231 | $ 138.60 |
| 9,000+ | $ 0.0218 | $ 196.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KUU | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.6pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 182pF | |
| Gate Charge(Qg) | 3.75nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The 5N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Features
AI Translation
- VDS = 100V, ID = 5A
- RDS(ON, typ) = 90mΩ @ VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



