VBsemi Elec BSC030N03MS G-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | BSC030N03MS G-VB |
| LCSC Part # | C7568867 |
| Packaging | DFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 50A DFN5x6-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 425pF | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 820mV | |
| Pd - Power Dissipation | 155W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.18nF | |
| Gate Charge(Qg) | 31nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench Power MOSFET
- 100% Rg and UIS tested
- RoHS compliant per EU Directive 2011/65/EU
Applications
AI Translation
- OR gate applications
- Servers
- DC/DC
In-Stock: 60
60 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.657$ 0.5585 | $ 0.56 |
| 10+ | $ 0.5333$ 0.4534 | $ 4.53 |
| 30+ | $ 0.4723$ 0.4015 | $ 12.05 |
| 100+ | $ 0.4113$ 0.3497 | $ 34.97 |
| 500+ | $ 0.3743$ 0.3182 | $ 159.10 |
| 1,000+ | $ 0.3566$ 0.3032 | $ 303.20 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 425pF | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 820mV | |
| Pd - Power Dissipation | 155W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.18nF | |
| Gate Charge(Qg) | 31nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench Power MOSFET
- 100% Rg and UIS tested
- RoHS compliant per EU Directive 2011/65/EU
Applications
AI Translation
- OR gate applications
- Servers
- DC/DC
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



