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HL 80N06F product image
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HL 80N06FRoHS

Manufacturer
HLAsian Brands
MPN
80N06F
LCSC Part #
C7543837
Packaging
PDFN-8-EP(5x6)
Customer #
Key Attributes
MOSFET N-CH 60V 80A PDFN-8-EP(5x6)
Datasheetpdf iconHL 80N06F
In-Stock: 13,290
13,290 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2081$ 1.04
50+$ 0.163$ 8.15
150+$ 0.1437$ 21.56
500+$ 0.1196$ 59.80
2,500+$ 0.1057$ 264.25
5,000+$ 0.0992$ 496.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHL
PackagingPDFN-8-EP(5x6)
Drain to Source Voltage60V
Output Capacitance(Coss)286pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation108W
Reverse Transfer Capacitance (Crss@Vds)257pF
RDS(on)6mΩ
Number1 N-channel
Input Capacitance(Ciss)4.136nF
Gate Charge(Qg)90nC@10V
TypeN-Channel
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Introduction

AI Translation

The 80N06F is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and and gate charge for most of the synchronous buck converter applications. The 80N06F meets the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

Features

AI Translation
  • Green Device
  • Super Low Gate
  • Excellent CdV/dt effect decline
  • Advanced high cell density Trench technology
  • 100% EAS Guaranteed