JSMSEMI IRLML2402TRPBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRLML2402TRPBF-JSM |
| LCSC Part # | C7529468 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 2.5A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 700mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 85mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 120pF | |
| Gate Charge(Qg) | 4.5nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
SI3134KS-TP-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product SI3134KS-TP-ES is lead-free.
Features
AI Translation
- Trench Power LV MOSFET technology
- High Power and current handing capability
Applications
AI Translation
- PWM application
- Load switch
In-Stock: 1,320
1,320 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0551$ 0.0441 | $ 0.44 |
| 100+ | $ 0.0439$ 0.0352 | $ 3.52 |
| 300+ | $ 0.0383$ 0.0307 | $ 9.21 |
| 3,000+ | $ 0.0341$ 0.0273 | $ 81.90 |
| 6,000+ | $ 0.0308$ 0.0247 | $ 148.20 |
| 9,000+ | $ 0.0291$ 0.0233 | $ 209.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 700mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 85mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 120pF | |
| Gate Charge(Qg) | 4.5nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
SI3134KS-TP-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product SI3134KS-TP-ES is lead-free.
Features
AI Translation
- Trench Power LV MOSFET technology
- High Power and current handing capability
Applications
AI Translation
- PWM application
- Load switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



