amsem 2N7002KDW
| Manufacturer | amsemAsian Brands |
| MPN | 2N7002KDW |
| LCSC Part # | C7528886 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 115mA SOT-363 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | amsem | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 115mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 120mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 35pF | |
| Gate Charge(Qg) | 800pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- RDS(ON), VGS@10V,IDS@500mA = 3Ω
- RDS(ON), VGS@4.5V,IDS@200mA = 4Ω
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Very Low Leakage Current In Off Condition
- ESD Protected 2KV HBM
- In compliance with EU RoHS 2002/95/EC directives
In-Stock: 2,520
2,520 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0288 | $ 0.58 |
| 200+ | $ 0.0225 | $ 4.50 |
| 600+ | $ 0.0189 | $ 11.34 |
| 3,000+ | $ 0.0168 | $ 50.40 |
| 9,000+ | $ 0.015 | $ 135.00 |
| 21,000+ | $ 0.014 | $ 294.00 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | amsem | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 115mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 120mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 35pF | |
| Gate Charge(Qg) | 800pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- RDS(ON), VGS@10V,IDS@500mA = 3Ω
- RDS(ON), VGS@4.5V,IDS@200mA = 4Ω
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Very Low Leakage Current In Off Condition
- ESD Protected 2KV HBM
- In compliance with EU RoHS 2002/95/EC directives
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



