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DIODES DMN2004K-7RoHS

Manufacturer
DIODES
MPN
DMN2004K-7
LCSC Part #
C75285
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 20V 630mA SOT-23
Datasheetpdf iconDIODES DMN2004K-7
In-Stock: 3,045
3,045 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.275$ 1.38
50+$ 0.215$ 10.75
150+$ 0.1892$ 28.38
500+$ 0.1571$ 78.55
3,000+$ 0.136$ 408.00
6,000+$ 0.1275$ 765.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)630mA
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)400mΩ@4.5V;700mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)150pF
Gate Charge(Qg)900pC@4.5V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Low on-resistance: RDS(on) = 550 mΩ (max) at VGS = 4.5 V
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage current
  • ESD protection up to 2 kV
  • Fully lead-free, fully RoHS compliant
  • Halogen-free and antimony-free "green" device
  • JEDEC-qualified (ref. AEC-Q) with high reliability

Applications

AI Translation
  • DC-DC Converter - Power Management Function