DIODES DMN26D0UFB4-7B
| Manufacturer | |
| MPN | DMN26D0UFB4-7B |
| LCSC Part # | C7525126 |
| Packaging | DFN-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 240mA DFN-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | DFN-3 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 240mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 6Ω@1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 28.2pF |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Very Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface Mount Package, 0.4mm Maximum Package Height
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- DC-DC converters
- Power management functions
In-Stock: 9,750
9,750 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0594 | $ 0.59 |
| 100+ | $ 0.0482 | $ 4.82 |
| 300+ | $ 0.0425 | $ 12.75 |
| 1,000+ | $ 0.0383 | $ 38.30 |
| 5,000+ | $ 0.0349 | $ 174.50 |
| 10,000+ | $ 0.0332 | $ 332.00 |
Standard Packaging10000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | DFN-3 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 240mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 6Ω@1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 28.2pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Very Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface Mount Package, 0.4mm Maximum Package Height
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- DC-DC converters
- Power management functions
C7525126 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | ECL99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | ECL99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



