VBsemi Elec NTMD4820NR2G-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | NTMD4820NR2G-VB |
| LCSC Part # | C7525084 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 7.2A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 140pF | |
| Current - Continuous Drain(Id) | 7.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF | |
| RDS(on) | 16mΩ@10V;20mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- 100% unclamped inductive switching (UIS) tested
- RoHS compliant (Directive 2002/95/EC)
Applications
AI Translation
- Notebook system power supply
- Low-current DC/DC converter
In-Stock: 55
55 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.3938 | $ 0.39 |
| 10+ | $ 0.3112 | $ 3.11 |
| 30+ | $ 0.2763 | $ 8.29 |
| 100+ | $ 0.2319 | $ 23.19 |
| 500+ | $ 0.2033 | $ 101.65 |
| 1,000+ | $ 0.1906 | $ 190.60 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 140pF | |
| Current - Continuous Drain(Id) | 7.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF | |
| RDS(on) | 16mΩ@10V;20mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- 100% unclamped inductive switching (UIS) tested
- RoHS compliant (Directive 2002/95/EC)
Applications
AI Translation
- Notebook system power supply
- Low-current DC/DC converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



