VBsemi Elec CSD16407Q5C-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | CSD16407Q5C-VB |
| LCSC Part # | C7525004 |
| Packaging | DFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 33A DFN5x6-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 33A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| RDS(on) | 1.8mΩ@10V;2.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.9nF | |
| Gate Charge(Qg) | 82nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- TrenchFET Power MOSFET 100 % Rg and UIS Tested
Applications
AI Translation
- OR-ing Server
- N-Channel MOSFET
In-Stock: 50
50 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0463$ 0.8894 | $ 0.89 |
| 10+ | $ 0.8447$ 0.7180 | $ 7.18 |
| 30+ | $ 0.7431$ 0.6317 | $ 18.95 |
| 100+ | $ 0.6431$ 0.5467 | $ 54.67 |
| 500+ | $ 0.5732$ 0.4873 | $ 243.65 |
| 1,000+ | $ 0.543$ 0.4616 | $ 461.60 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 33A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| RDS(on) | 1.8mΩ@10V;2.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.9nF | |
| Gate Charge(Qg) | 82nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- TrenchFET Power MOSFET 100 % Rg and UIS Tested
Applications
AI Translation
- OR-ing Server
- N-Channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



