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UMW FDD6670A(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
FDD6670A(UMW)
LCSC Part #
C7499393
Packaging
TO-252
Customer #
Key Attributes
MOSFET 30V 66A TO-252
Datasheetpdf iconUMW FDD6670A(UMW)
In-Stock: 2,285
2,285 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1268$ 0.63
50+$ 0.1$ 5.00
150+$ 0.0865$ 12.98
500+$ 0.0765$ 38.25
2,500+$ 0.0684$ 171.00
5,000+$ 0.0644$ 322.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingTO-252
Drain to Source Voltage30V
Current - Continuous Drain(Id)66A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.755nF
Gate Charge(Qg)22nC@15V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching speed, and ultra-low RDS(ON) in a compact package.

Features

AI Translation
  • VDS = 30V
  • RDS(ON) = 8mΩ (VGS = 10V)
  • RDS(ON) = 10mΩ (VGS = 4.5V)
  • Low gate charge
  • Fast switching
  • Ultra-low RDS(ON) achieved with high-performance trench technology