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UMW FDD8880(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
FDD8880(UMW)
LCSC Part #
C7499391
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 30V 58A TO-252
Datasheetpdf iconUMW FDD8880(UMW)
In-Stock: 1,270
1,270 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1536$ 0.77
50+$ 0.1204$ 6.02
150+$ 0.1062$ 15.93
500+$ 0.0885$ 44.25
2,500+$ 0.0805$ 201.25
5,000+$ 0.0758$ 379.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingTO-252
Drain to Source Voltage30V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.26nF
Gate Charge(Qg)23nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is designed to enhance the overall efficiency of DC/DC converters employing synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.

Features

AI Translation
  • VDS = 30V
  • RDS(ON) < 9mΩ (VGS = 10V)
  • RDS(ON) < 12mΩ (VGS = 4.5V)
  • Low gate resistance
  • High power and current handling capability
  • Advanced trench technology for ultra-low RDS(ON)