UMW FDS6670A(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | FDS6670A(UMW) |
| LCSC Part # | C7499388 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 13A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 535pF | |
| Current - Continuous Drain(Id) | 13A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.22nF | |
| Gate Charge(Qg) | 30nC@15V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device is ideal for low-voltage and battery-powered applications requiring low line power loss and fast switching.
Features
AI Translation
- V_DS = 30V
- I_D = 13A
- R_DS(ON) < 6mΩ (V_GS = 10V)
- R_DS(ON) < 7.2mΩ (V_GS = 4.5V)
- High power and current handling capability
- Ultra-low R_DS(ON) via advanced trench technology
- Low gate charge
- Fast switching speed
In-Stock: 330
330 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1557 | $ 0.78 |
| 50+ | $ 0.1221 | $ 6.11 |
| 150+ | $ 0.1077 | $ 16.16 |
| 500+ | $ 0.0897 | $ 44.85 |
| 3,000+ | $ 0.0816 | $ 244.80 |
| 6,000+ | $ 0.0768 | $ 460.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 535pF | |
| Current - Continuous Drain(Id) | 13A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.22nF | |
| Gate Charge(Qg) | 30nC@15V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device is ideal for low-voltage and battery-powered applications requiring low line power loss and fast switching.
Features
AI Translation
- V_DS = 30V
- I_D = 13A
- R_DS(ON) < 6mΩ (V_GS = 10V)
- R_DS(ON) < 7.2mΩ (V_GS = 4.5V)
- High power and current handling capability
- Ultra-low R_DS(ON) via advanced trench technology
- Low gate charge
- Fast switching speed
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
