UMW FDS6682(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | FDS6682(UMW) |
| LCSC Part # | C7499381 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET 30V 14A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 582pF | |
| Current - Continuous Drain(Id) | 14A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 9mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 237pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.31nF | |
| Gate Charge(Qg) | 22nC@15V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Optimized for low-side synchronous rectifier operation, it delivers ultra-low R_DS(ON) in a compact package.
Features
AI Translation
- V_DS(V) = 30 V
- I_D = 14 A
- R_DS(ON) < 7.5 mΩ (V_GS = 10 V)
- R_DS(ON) < Q mΩ (V_GS = 4.5 V)
- High power and current handling capability
- Advanced trench technology for ultra-low R_DS(ON)
- Low gate charge (typical 22 nC)
In-Stock: 3,000
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1626 | $ 0.81 |
| 50+ | $ 0.1277 | $ 6.39 |
| 150+ | $ 0.1128 | $ 16.92 |
| 500+ | $ 0.0941 | $ 47.05 |
| 3,000+ | $ 0.0858 | $ 257.40 |
| 6,000+ | $ 0.0808 | $ 484.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 582pF | |
| Current - Continuous Drain(Id) | 14A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 9mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 237pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.31nF | |
| Gate Charge(Qg) | 22nC@15V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Optimized for low-side synchronous rectifier operation, it delivers ultra-low R_DS(ON) in a compact package.
Features
AI Translation
- V_DS(V) = 30 V
- I_D = 14 A
- R_DS(ON) < 7.5 mΩ (V_GS = 10 V)
- R_DS(ON) < Q mΩ (V_GS = 4.5 V)
- High power and current handling capability
- Advanced trench technology for ultra-low R_DS(ON)
- Low gate charge (typical 22 nC)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

