Slkor IRF9540
| Manufacturer | SlkorAsian Brands |
| MPN | IRF9540 |
| LCSC Part # | C7496537 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET P-CH 100V 20A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Slkor | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 58W | |
| RDS(on) | 90mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.02nF | |
| Gate Charge(Qg) | 44nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=-100V, ID=-20A, RDS(ON)<90mΩ@VGS=-10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra low RDS(ON).
- Excellent package for good heat dissipation.
Applications
AI Translation
- PWM applications
- Load switch
In-Stock: 71
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5241 | $ 0.52 |
| 10+ | $ 0.4118 | $ 4.12 |
| 50+ | $ 0.363 | $ 18.15 |
| 100+ | $ 0.3028 | $ 30.28 |
| 500+ | $ 0.2767 | $ 138.35 |
| 1,000+ | $ 0.2605 | $ 260.50 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Slkor | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 58W | |
| RDS(on) | 90mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.02nF | |
| Gate Charge(Qg) | 44nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=-100V, ID=-20A, RDS(ON)<90mΩ@VGS=-10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra low RDS(ON).
- Excellent package for good heat dissipation.
Applications
AI Translation
- PWM applications
- Load switch
C7496537 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



