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JSMSEMI IRF3415PBF-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
IRF3415PBF-JSM
LCSC Part #
C7496527
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 200V 40A TO-220
Datasheetpdf iconJSMSEMI IRF3415PBF-JSM
In-Stock: 64
64 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.381$ 1.2429$ 1.24
10+$ 1.2023$ 1.0821$ 10.82
50+$ 1.1048$ 0.9944$ 49.72
100+$ 0.9943$ 0.8949$ 89.49
500+$ 0.9456$ 0.8511$ 425.55
1,000+$ 0.9228$ 0.8306$ 830.60
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingTO-220
Drain to Source Voltage200V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)101pF
RDS(on)50mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
Gate Charge(Qg)154nC@160V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The SI2303 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 2.5V gate voltage. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Proprietary New Planar Technology
  • RDS (ON), typ. = 50mΩ @ VGS = 10V
  • Low Gate Charge Minimize Switching Loss
  • Fast Recovery Body Diode

Applications

AI Translation
  • DC-DC Converters
  • DC-AC Inverters for UPS
  • SMPS and Motor controls