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onsemi FQD2N100TMRoHS

Manufacturer
onsemi
MPN
FQD2N100TM
LCSC Part #
C74765
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET N-CH 1kV 1.6A TO-252(DPAK)
Datasheetpdf icononsemi FQD2N100TM
In-Stock: 3,931
3,931 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.8537$ 0.85
10+$ 0.6798$ 6.80
30+$ 0.5936$ 17.81
100+$ 0.5074$ 50.74
500+$ 0.457$ 228.50
1,000+$ 0.431$ 431.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-252(DPAK)
Drain to Source Voltage1kV
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)6.5pF
RDS(on)9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)520pF
Gate Charge(Qg)15.5nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

AI Translation
  • 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.) @ VGS = 10 V, ID = 0.8 A
  • Low Gate Charge (Typ. 12 nC)
  • Low Crss (Typ. 5 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

AI Translation
  • switched mode power supplies
  • active power factor correction (PFC)
  • electronic lamp ballasts