Navitas NV6115-RA
| Manufacturer | |
| MPN | NV6115-RA |
| LCSC Part # | C7471517 |
| Packaging | QFN-8(5x6) |
| Customer # | |
| Key Attributes | 650V 8A 170mΩ QFN-8(5x6) Power Driver Modules RoHS |
| Datasheet |  Navitas NV6115-RA |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Power Driver Modules | |
| Manufacturer | Navitas | |
| Packaging | QFN-8(5x6) | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 8A | |
| RDS(on) | 170mΩ | |
| Operating Temperature - | -40℃~+125℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | - | |
| Type | - | |
| Number | - | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This GaNFast power IC is optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient power converters. The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, 5×6 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency. GaNFast power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, etc. to MHz+ and enable the commercial introduction of breakthrough designs.
Features
- Monolithically-integrated gate drive
- Wide logic input range range with hysteresis
- 5 V / 15 V input-compatible
- Wide VCC range (10 to 30 V)
- Programmable turn-on dV/dt
- 200 V/ns dV/dt immunity
- 800 V Transient Voltage Rating
- 650 V Continuous Voltage Rating
- Low 170 mΩ resistance
- Zero reverse recovery charge
- ESD protection - 2 kV (HBM), 1 kV (CDM)
- 2 MHz operation
- Small, low-profile SMT QFN
- 6×8 mm footprint, 0.85 mm profile
- Minimized package inductance
- RoHS, Pb-free, REACH-compliant
- Up to 40% energy savings vs Si solutions
- System level 4kg CO2 Carbon Footprint reduction
Applications
- AC-DC, DC-DC, DC-AC
- QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D
- Wireless power, Solar Micro-inverters, LED lighting, TV SMPS, Server, Telecom
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 5.764 | $ 5.76 |
| 200+ | $ 2.3 | $ 460.00 |
| 500+ | $ 2.2242 | $ 1112.10 |
| 1,000+ | $ 2.1855 | $ 2185.50 |
Standard Packaging1000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Power Driver Modules | |
| Manufacturer | Navitas | |
| Packaging | QFN-8(5x6) | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 8A | |
| RDS(on) | 170mΩ | |
| Operating Temperature - | -40℃~+125℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | - | |
| Type | - | |
| Number | - | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This GaNFast power IC is optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient power converters. The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, 5×6 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency. GaNFast power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, etc. to MHz+ and enable the commercial introduction of breakthrough designs.
Features
- Monolithically-integrated gate drive
- Wide logic input range range with hysteresis
- 5 V / 15 V input-compatible
- Wide VCC range (10 to 30 V)
- Programmable turn-on dV/dt
- 200 V/ns dV/dt immunity
- 800 V Transient Voltage Rating
- 650 V Continuous Voltage Rating
- Low 170 mΩ resistance
- Zero reverse recovery charge
- ESD protection - 2 kV (HBM), 1 kV (CDM)
- 2 MHz operation
- Small, low-profile SMT QFN
- 6×8 mm footprint, 0.85 mm profile
- Minimized package inductance
- RoHS, Pb-free, REACH-compliant
- Up to 40% energy savings vs Si solutions
- System level 4kg CO2 Carbon Footprint reduction
Applications
- AC-DC, DC-DC, DC-AC
- QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D
- Wireless power, Solar Micro-inverters, LED lighting, TV SMPS, Server, Telecom
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |