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VBsemi Elec SiA444DJT-T1-GE3-VB product image
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VBsemi Elec SiA444DJT-T1-GE3-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SiA444DJT-T1-GE3-VB
LCSC Part #
C7463622
Packaging
DFN-6(2x2)
Customer #
Key Attributes
MOSFET N-CH 30V 6A DFN-6(2x2)
Datasheetpdf iconVBsemi Elec SiA444DJT-T1-GE3-VB
In-Stock: 950
950 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7764$ 0.6600$ 0.66
10+$ 0.6923$ 0.5885$ 5.89
30+$ 0.651$ 0.5534$ 16.60
100+$ 0.6097$ 0.5183$ 51.83
500+$ 0.5827$ 0.4953$ 247.65
1,000+$ 0.57$ 0.4845$ 484.50
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingDFN-6(2x2)
Drain to Source Voltage30V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V;2.5V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)23mΩ@10V;27mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)424pF
Gate Charge(Qg)4.2nC@10V;8.2nC@15V
TypeN-Channel
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Features

AI Translation
  • Compliant with halogen-free requirements as defined by IEC 61249-2-21
  • Trench power MOSFET
  • Low on-resistance
  • 100% gate resistance (Rg) tested
  • Compliant with RoHS Directive 2002/95/EC

Applications

AI Translation
  • DC-DC converters, high-speed switching