VBsemi Elec FDD8778-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | FDD8778-VB |
| LCSC Part # | C7463576 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 70A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 525pF | |
| Current - Continuous Drain(Id) | 70A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 3.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF | |
| RDS(on) | 7mΩ@10V;9mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.201nF | |
| Gate Charge(Qg) | 35nC@10V;25nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Applications
AI Translation
- OR Gate - Server - DC/DC
In-Stock: 164
164 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4176$ 0.3550 | $ 0.36 |
| 10+ | $ 0.3351$ 0.2849 | $ 2.85 |
| 30+ | $ 0.3001$ 0.2551 | $ 7.65 |
| 100+ | $ 0.2557$ 0.2174 | $ 21.74 |
| 500+ | $ 0.2128$ 0.1809 | $ 90.45 |
| 1,000+ | $ 0.2017$ 0.1715 | $ 171.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 525pF | |
| Current - Continuous Drain(Id) | 70A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 3.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF | |
| RDS(on) | 7mΩ@10V;9mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.201nF | |
| Gate Charge(Qg) | 35nC@10V;25nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Applications
AI Translation
- OR Gate - Server - DC/DC
C7463576 EasyEDA Library
Not drawn yet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



