VBsemi Elec FDD8451-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | FDD8451-VB |
| LCSC Part # | C7463502 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 55A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 725pF | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 570pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.801nF | |
| Gate Charge(Qg) | 42nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- TrenchFET Power MOSFET 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2011/65/EU
Applications
AI Translation
- OR Gate Applications - Servers - DC/DC Conversion
In-Stock: 163
163 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5367$ 0.4562 | $ 0.46 |
| 10+ | $ 0.4303$ 0.3658 | $ 3.66 |
| 30+ | $ 0.3843$ 0.3267 | $ 9.80 |
| 100+ | $ 0.3271$ 0.2781 | $ 27.81 |
| 500+ | $ 0.2747$ 0.2335 | $ 116.75 |
| 1,000+ | $ 0.2588$ 0.2200 | $ 220.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 725pF | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 570pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.801nF | |
| Gate Charge(Qg) | 42nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- TrenchFET Power MOSFET 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2011/65/EU
Applications
AI Translation
- OR Gate Applications - Servers - DC/DC Conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



