VBsemi Elec IRF1405PBF-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRF1405PBF-VB |
| LCSC Part # | C7463487 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 210A TO-220AB |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 1nF | |
| Current - Continuous Drain(Id) | 210A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 375W | |
| Reverse Transfer Capacitance (Crss@Vds) | 750pF | |
| RDS(on) | 3mΩ@10V;9mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.3nF | |
| Gate Charge(Qg) | 180nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free According to IEC 61249-2-2 Definition
- TrenchFET Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2002/95/EC
In-Stock: 50
50 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.491$ 1.4165 | $ 1.42 |
| 10+ | $ 1.2466$ 1.1843 | $ 11.84 |
| 50+ | $ 1.033$ 0.9814 | $ 49.07 |
| 100+ | $ 0.8808$ 0.8368 | $ 83.68 |
| 500+ | $ 0.8132$ 0.7726 | $ 386.30 |
| 1,000+ | $ 0.784$ 0.7448 | $ 744.80 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 1nF | |
| Current - Continuous Drain(Id) | 210A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 375W | |
| Reverse Transfer Capacitance (Crss@Vds) | 750pF | |
| RDS(on) | 3mΩ@10V;9mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.3nF | |
| Gate Charge(Qg) | 180nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free According to IEC 61249-2-2 Definition
- TrenchFET Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2002/95/EC
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



