JSMSEMI BSS131 H6327-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | BSS131 H6327-JSM |
| LCSC Part # | C7462831 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 250V 0.1A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 100mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 3.4Ω | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 20nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NCE60P04SN utilizes advanced trench technology and design to deliver excellent on-resistance RDS(ON) with low gate charge. This device is ideally suited for use as a load switch or in PWM applications.
Features
AI Translation
- VDS (V) = 250V
- ΔD = 400mA
- RDS(ON) < 3.4 Ω (VGS = 10V)
- RDS(ON) = 4.5 (VGS = 4.5V)
Applications
AI Translation
- Load Switch - PWM Applications
In-Stock: 3,125
3,125 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1009$ 0.0909 | $ 0.45 |
| 50+ | $ 0.0814$ 0.0733 | $ 3.67 |
| 150+ | $ 0.0717$ 0.0646 | $ 9.69 |
| 500+ | $ 0.0644$ 0.0580 | $ 29.00 |
| 3,000+ | $ 0.0586$ 0.0528 | $ 158.40 |
| 6,000+ | $ 0.0557$ 0.0502 | $ 301.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 100mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 3.4Ω | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 20nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NCE60P04SN utilizes advanced trench technology and design to deliver excellent on-resistance RDS(ON) with low gate charge. This device is ideally suited for use as a load switch or in PWM applications.
Features
AI Translation
- VDS (V) = 250V
- ΔD = 400mA
- RDS(ON) < 3.4 Ω (VGS = 10V)
- RDS(ON) = 4.5 (VGS = 4.5V)
Applications
AI Translation
- Load Switch - PWM Applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



