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JSMSEMI AO4618-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
AO4618-JSM
LCSC Part #
C7462819
Packaging
SOP-8
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 40V 8A SOP-8
Datasheetpdf iconJSMSEMI AO4618-JSM
In-Stock: 3,456
3,456 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4113$ 0.3620$ 0.36
10+$ 0.3239$ 0.2851$ 2.85
30+$ 0.2858$ 0.2515$ 7.55
100+$ 0.2398$ 0.2111$ 21.11
500+$ 0.2176$ 0.1915$ 95.75
1,000+$ 0.2049$ 0.1804$ 180.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOP-8
Drain to Source Voltage40V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)53mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)850pF
Gate Charge(Qg)13nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N + P Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • N-Channel: V_DS = 40V, I_D = 8A, R_DS(ON) < 22mΩ @ V_GS = 10V
  • P-Channel: V_DS = -40V, I_D = -6A, R_DS(ON) < 53mΩ @ V_GS = -10V
  • Low gate charge.
  • Green device available.
  • Advanced high cell denity trench technology for ultra low RDS(ON).
  • Excellent package for good heat dissipation.

Applications

AI Translation
  • Power switching circuits for adapters and chargers.