JSMSEMI NDS9945-NL-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | NDS9945-NL-JSM |
| LCSC Part # | C7435523 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V 4.5A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.02nF | |
| Gate Charge(Qg) | 19nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = 60V, ID = 4.5A, RDS(ON) < 36mΩ@VGS = 10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
Applications
AI Translation
- Load Switches - Battery Switches
In-Stock: 62
62 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4686$ 0.4218 | $ 0.42 |
| 10+ | $ 0.3721$ 0.3349 | $ 3.35 |
| 30+ | $ 0.3309$ 0.2979 | $ 8.94 |
| 100+ | $ 0.2787$ 0.2509 | $ 25.09 |
| 500+ | $ 0.2549$ 0.2295 | $ 114.75 |
| 1,000+ | $ 0.2407$ 0.2167 | $ 216.70 |
Standard Packaging4000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.02nF | |
| Gate Charge(Qg) | 19nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = 60V, ID = 4.5A, RDS(ON) < 36mΩ@VGS = 10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
Applications
AI Translation
- Load Switches - Battery Switches
C7435523 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



