JSMSEMI TF2003M-TR-JSM

A high-voltage, high-speed power MOSFET high- and low-side gate driver IC. Features independent high-side and low-side referenced output channels. Fabricated with a high-voltage compatible process enabling monolithic integration of both high- and low-side gate drive circuits. Logic inputs are compatible with CMOS or LSTTL logic outputs down to 3.3V. Outputs feature high-current pulse capability with shoot-through protection deadtime logic. The floating channel is suitable for driving high-side N-channel power MOSFETs, with a maximum floating supply offset voltage up to 250V. Available in SOIC8 package, operating over a -40°C to 125°C temperature range.

• Bootstrap floating high-side channel
• Maximum operating voltage +250V
• Compatible with 3.3V, 5V, and 15V input logic
• dVs/dt immunity up to ±50 V/ns
• Vs negative bias capability down to -9V
• Gate drive voltage range 10V to 20V
• Integrated UVLO circuit
  • UVLO positive threshold 8.9V
  • UVLO negative threshold 8.2V
• Shoot-through prevention dead-time logic
  • Dead time 520ns
• Propagation delay characteristics
  • Turn-on/turn-off propagation delay Ton/Toff = 160ns/150ns
  • Delay matching 30ns
• Wide temperature range -40°C~125°C
• Output stage source/sink current capability 290mA/600mA
• RoHS compliant
• SOIC8 (S)

• Motor Control
• Air Conditioner/Washing Machine
• General-Purpose Inverter
• Micro Inverter Drive