Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 58.5pF | |
| RDS(on) | 20mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 358pF | |
| Gate Charge(Qg) | 5.6nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The 2312A is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDSON and efficiency for most of the small power switching and load switch applications. The 2312A meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
- MB/VGA core voltage
- Secondary synchronous rectifier for switching power supplies
- Point-of-load applications
- Brushless DC motor driver
In-Stock: 1,960
1,960 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.021 | $ 0.42 |
| 200+ | $ 0.0164 | $ 3.28 |
| 600+ | $ 0.0138 | $ 8.28 |
| 3,000+ | $ 0.0122 | $ 36.60 |
| 9,000+ | $ 0.0109 | $ 98.10 |
| 21,000+ | $ 0.0102 | $ 214.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 58.5pF | |
| RDS(on) | 20mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 358pF | |
| Gate Charge(Qg) | 5.6nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The 2312A is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDSON and efficiency for most of the small power switching and load switch applications. The 2312A meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
- MB/VGA core voltage
- Secondary synchronous rectifier for switching power supplies
- Point-of-load applications
- Brushless DC motor driver
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



