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Minos IRF640RoHS

Manufacturer
MinosAsian Brands
MPN
IRF640
LCSC Part #
C7429903
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 200V 18A TO-220
Datasheetpdf iconMinos IRF640
In-Stock: 2,311
2,311 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.2732$ 0.27
10+$ 0.2158$ 2.16
50+$ 0.1855$ 9.28
100+$ 0.1548$ 15.48
500+$ 0.1411$ 70.55
1,000+$ 0.1329$ 132.90
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-220
Drain to Source Voltage200V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.32nF
Gate Charge(Qg)23nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

IRF640, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

Features

AI Translation
  • Fast Switching
  • Low Crss
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS product

Applications

AI Translation
  • High frequency switching mode power supply