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Minos IRF630NRoHS

Manufacturer
MinosAsian Brands
MPN
IRF630N
LCSC Part #
C7429901
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 200V 9A TO-220
Datasheetpdf iconMinos IRF630N
In-Stock: 1,375
1,375 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.2377$ 0.24
10+$ 0.189$ 1.89
50+$ 0.1546$ 7.73
100+$ 0.1286$ 12.86
500+$ 0.117$ 58.50
1,000+$ 0.11$ 110.00
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-220
Drain to Source Voltage200V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)8.6pF
RDS(on)260mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)550pF
Gate Charge(Qg)12nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

IRF630N is a silicon N-channel enhancement-mode MOSFET fabricated using advanced MOSFET technology, offering reduced on-state losses, improved switching performance, and enhanced avalanche energy capability. This transistor is suitable for switched-mode power supplies, high-speed switching, and general-purpose applications.

Features

AI Translation
  • Fast switching
  • Low Crss
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Applications

AI Translation
  • High-frequency switch-mode power supplies