VBsemi Elec IRF7493TRPBF-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRF7493TRPBF-VB |
| LCSC Part # | C7429017 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 80V 13A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 382pF | |
| Current - Continuous Drain(Id) | 13A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 6.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.531nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Super Trench technology Power MOSFET
- Excellent gate charge x Rds (on) product(FOM)
- Very low on-resfistance Rds (on)
- 100 % Rg and UIS Tested
Applications
AI Translation
- DC/DC Converter
- Ideal for hfigh-frequency swfitchfing and synchronous
In-Stock: 39
39 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.778$ 0.6613 | $ 0.66 |
| 10+ | $ 0.6272$ 0.5332 | $ 5.33 |
| 30+ | $ 0.551$ 0.4684 | $ 14.05 |
| 100+ | $ 0.4764$ 0.4050 | $ 40.50 |
| 500+ | $ 0.4303$ 0.3658 | $ 182.90 |
| 1,000+ | $ 0.4081$ 0.3469 | $ 346.90 |
Standard Packaging4000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 382pF | |
| Current - Continuous Drain(Id) | 13A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 6.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.531nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Super Trench technology Power MOSFET
- Excellent gate charge x Rds (on) product(FOM)
- Very low on-resfistance Rds (on)
- 100 % Rg and UIS Tested
Applications
AI Translation
- DC/DC Converter
- Ideal for hfigh-frequency swfitchfing and synchronous
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



