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VBsemi Elec IPD320N20N3G-VB product image
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VBsemi Elec IPD320N20N3G-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
IPD320N20N3G-VB
LCSC Part #
C7428992
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 200V 30A TO-252
Datasheetpdf iconVBsemi Elec IPD320N20N3G-VB
In-Stock: 88
88 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.6208$ 1.5398$ 1.54
10+$ 1.3718$ 1.3033$ 13.03
30+$ 1.216$ 1.1552$ 34.66
100+$ 1.0554$ 1.0027$ 100.27
500+$ 0.9831$ 0.9340$ 467.00
1,000+$ 0.9526$ 0.9050$ 905.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)55mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)51nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • TrenchFET Power MOSFET
  • 175 °C Junction Temperature
  • PWM Optimized
  • 100 % Rg Tested
  • Compliant to RoHS Directive 2002/95/EC

Applications

AI Translation
  • N-Channel MOSFET
  • Primary Side Switch