LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
10% OFF
JSMSEMI FDN86246 product image
  • FDN86246 thumbnail 1
  • FDN86246 thumbnail 2
  • FDN86246 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

JSMSEMI FDN86246RoHS

Manufacturer
JSMSEMIAsian Brands
MPN
FDN86246
LCSC Part #
C7421706
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 150V 1.8A SOT-23
Datasheetpdf iconJSMSEMI FDN86246
In-Stock: 55
55 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1926$ 0.1734$ 0.87
50+$ 0.1508$ 0.1358$ 6.79
150+$ 0.1329$ 0.1197$ 17.96
500+$ 0.1106$ 0.0996$ 49.80
3,000+$ 0.1031$ 0.0928$ 278.40
6,000+$ 0.0971$ 0.0874$ 524.40
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-23
Configuration-
Drain to Source Voltage150V
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)250mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)840pF
Gate Charge(Qg)18nC@10V
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The FDN86246 is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FDN86246 meet the RoHS and Green Product requirement with full function reliability approved.

Features

AI Translation
  • Green Device Available
  • Super Low Gate Charge
  • Excellent Cdv/dt effect decline
  • Advanced high cell density Trench technology

Applications

AI Translation
  • High-speed switching applications