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R+O 2N7002 product image
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R+O 2N7002RoHS

Manufacturer
R+OAsian Brands
MPN
2N7002
LCSC Part #
C7420321
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 115mA SOT-23
Datasheetpdf iconR+O 2N7002
In-Stock: 2,660
2,660 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.02$ 0.40
200+$ 0.0163$ 3.26
600+$ 0.0142$ 8.52
3,000+$ 0.013$ 39.00
9,000+$ 0.012$ 108.00
21,000+$ 0.0114$ 239.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)115mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation225mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)1.6nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • Drain-Source Voltage (VDS) = 60V
  • Drain Current (ID) = 115 mA
  • On-Resistance (RDS(on)) < 5.0 Ω at Gate-Source Voltage (VGS) = 10 V
  • On-Resistance (RDS(on)) < 7.0 Ω at Gate-Source Voltage (VGS) = 5.0 V
  • Trench power medium-voltage MOSFET technology
  • Voltage-controlled small-signal switching
  • Fast switching speed

Applications

AI Translation
  • Battery-powered systems
  • Solid-state relays
  • Direct logic-level interface: TTL/CMOS