TI TMS45169-70DZ

The TMS45169 series are high-speed, 4194304-bit dynamic random-access memories (DRAMs) organized as 262144 words of 16 bits each. The TMS45169P series are high-speed, low-power, self-refresh 4194304-bit DRAMs organized as 262144 words of 16 bits each. They employ state-of-the-art EPICTM technology for high performance, reliability, and low power at low cost. These devices feature maximum RAS access times of 50 ns, 60 ns, and 70 ns. Maximum power dissipation is as low as 880 mW operating and 11 mW standby on 80-ns devices. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS45169 and TMS45169P each are offered in a 40-lead plastic surface-mount SOJ package (DZ suffix) and a 40/44-lead plastic surface-mount TSOP (DGE suffix). These packages are characterized for operation from 0°C to 70°C