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MSKSEMI DMG2305UX-7-MS product image
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MSKSEMI DMG2305UX-7-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
DMG2305UX-7-MS
LCSC Part #
C7379997
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 4A SOT-23
Datasheetpdf iconMSKSEMI DMG2305UX-7-MS
In-Stock: 270
270 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0392$ 0.0353$ 0.35
100+$ 0.031$ 0.0279$ 2.79
300+$ 0.0269$ 0.0243$ 7.29
3,000+$ 0.0238$ 0.0215$ 64.50
6,000+$ 0.0213$ 0.0192$ 115.20
9,000+$ 0.0201$ 0.0181$ 162.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-23
Configuration-
Drain to Source Voltage20V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)35mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)8.8nC@4.5V
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The DMG2305UX-7-MS is the high cell density trenched P-ch MOSFETS, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The DMG2305UX-7-MS meet the RoHS and Green Product requirement with full function reliability approved.

Features

AI Translation
  • VDS = -20V, ID = -4A
  • RDS(ON) < 45mΩ @ VGS = -4.5V
  • RDS(ON) < 63mΩ @ VGS = -2.5V

Applications

AI Translation
  • Super Low Gate Charge
  • Green Device Available
  • Excellent CdV/dt effect decline
  • Advanced high cell density Trench technology