MSKSEMI DMG2302UK-7-MS
| Manufacturer | MSKSEMIAsian Brands |
| MPN | DMG2302UK-7-MS |
| LCSC Part # | C7379996 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 3.2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Pd - Power Dissipation | 1.05W | |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 180pF | |
| Gate Charge(Qg) | 623nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The DMG2302UK-7-MS is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The DMG2302UK-7-MS meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Green Device Available
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
- Green/eco-friendly device available
- Ultra-low gate charge
- Excellent dv/dt immunity
- Advanced high cell density trench technology
In-Stock: 420
420 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0227 | $ 0.45 |
| 200+ | $ 0.0177 | $ 3.54 |
| 600+ | $ 0.0149 | $ 8.94 |
| 3,000+ | $ 0.0133 | $ 39.90 |
| 9,000+ | $ 0.0118 | $ 106.20 |
| 21,000+ | $ 0.011 | $ 231.00 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Pd - Power Dissipation | 1.05W | |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 180pF | |
| Gate Charge(Qg) | 623nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The DMG2302UK-7-MS is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The DMG2302UK-7-MS meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Green Device Available
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
- Green/eco-friendly device available
- Ultra-low gate charge
- Excellent dv/dt immunity
- Advanced high cell density trench technology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



